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physical.and.chemical.rate.processes
Based on the continuum modelling of complicated chemical engineering processes
involving simultaneous transport of momentum, heat and mass and
chemical reactions, recent and current investigations include:
Computational and experimental analysis of chemical vapor deposition processes. This is collaborative research with Dr. C. Vahlas at CIRIMAT/
ENSIACET, Toulouse, France. Partially funded by OSRAM Opto Semiconductors GmbH (Regensburg, Germany) and MECANO I&D (Toulouse, France).
Modelling of plasma processes aiming at the development
of an integrated, self-consistent simulator, accounting for plasma
physics and surface and bulk chemistry. The simulator is applied
to the etching and deposition of mainly SiO2 and Si in fluorocarbon
plasma reactors. The main efforts focus on the integration of the
simulator with a profiler of micro-etched surfaces.
This is collaborative research with Dr.
E. Gogolides and Dr. G. Kokkoris at the Institute of Nanoscience and Nanotechnology of the National Center for Scientific Research “Demokritos”.
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